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this is information on a product in full production. april 2014 docid025306 rev 1 1/13 STGD6NC60H-1 n-channel 600 v, 7 a - ipak very fast powermesh? igbt datasheet - production data figure 1. internal schematic diagram features ? low on voltage drop (v cesat ) ? low c res / c ies ratio (no cross-conduction susceptibility) ? high frequency operation description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh? igbts, with outstanding performances. the suffix h identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced t fall ) maintaining a low voltage drop. applications ? high frequency inverters ? smps and pfc in both hard switch and resonant topologies ? motor drivers 3 2 1 tab ipak c (2 or tab) g (1) e (3) type v ces v ce(sat) max@25c i c @100c stgd6nc60h 600v <2.5v 7a table 1. device summary part number marking package packaging STGD6NC60H-1 gd6nc60h ipak tube www.st.com
contents STGD6NC60H-1 2/13 docid025306 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid025306 rev 1 3/13 STGD6NC60H-1 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v i c (1) 1. calculated according to the iterative formula: : collector current (continuous) at t c = 25c 15 a i c (1) collector current (continuous) at t c = 100c 7 a i cm (2) 2. pulse width limited by max junction temperature collector current (pulsed) 21 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25c 62.5 w t stg storage temperature ? 55 to 150 c t j operating junction temperature t l maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case) 300 c table 3. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case max 2 c/w rthj-amb thermal resistance junction-ambient max 100 c/w i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () --------------------------------------------------------------------------------------------------- =
electrical characteristics STGD6NC60H-1 4/13 docid025306 rev 1 2 electrical characteristics (t case =25c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 1ma, v ge = 0 600 v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 3a v ge = 15v, i c = 3a, tc= 125c 1.9 1.7 2.5 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 3.75 5.75 v i ces collector cut-off current (v ge = 0) v ce = 600v v ce = 600v, t c = 125c 10 1 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20v, v ce = 0 100 na g fs forward transconductance v ce = 15v , i c = 3a 3 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25v, f = 1mhz, v ge = 0 -205-pf c oes output capacitance - 32 - pf c res reverse transfer capacitance -5.5-pf q g total gate charge v ce = 390v, i c = 3a, v ge = 15v, (see figure 17) - 13.6 - nc q ge gate-emitter charge 3.4 nc q gc gate-collector charge 5.1 nc i cl turn-off soa minimum current v clamp =390v, tj=150c, r g =10 ? , v ge =15v -19-a
docid025306 rev 1 5/13 STGD6NC60H-1 electrical characteristics 13 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v cc = 390v, i c = 3a r g = 10 ? , v ge = 15v, (see figure 18) -12-ns t r current rise time - 5 - ns (di/dt) on turn-on current slope - 612 - a/s t d(on) turn-on delay time v cc = 390v, i c = 3a r g = 10 ? , v ge = 15v, tj=125c (see figure 18) -13-ns t r current rise time - 4.3 - ns (di/dt) on turn-on current slope - 560 - as t r(voff) off voltage rise time v cc = 390v, i c = 3a, r ge = 10 ? , v ge = 15v (see figure 18) -40-ns t d(off) turn-off delay time - 76 - ns t f current fall time - 100 - ns t r(voff) off voltage rise time v cc = 390v, i c = 3a, r ge = 10 ? , v ge = 15v, tj=125c (see figure 18) -60-ns t d(off) turn-off delay time - 98 - ns t f current fall time - 124 - ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on (1) 1. eon is the tun-on losses when a typical diode is used in the test circuit in figure 18. if the igbt is offered in a package with a co-pak diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25c and 125c) turn-on switching losses v cc = 390v, i c = 3a r g =10 ? , v ge =15v (see figure 18) -20-j e off (2) 2. turn-off losses include also the tail of the collector current turn-off switching losses - 68 - j e ts total switching losses - 88 - j e on (1) turn-on switching losses v cc = 390v, i c = 3a r g =10 ? , v ge =15v, tj= 125c (see figure 18) -37-j e off (2) turn-off switching losses - 93 - j e ts total switching losses - 130 - j
electrical characteristics STGD6NC60H-1 6/13 docid025306 rev 1 2.1 electrical characteristics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. transconductance figure 5. collector-emitter on voltage vs temperature figure 6. gate charge vs gate-source voltage figure 7. capacitance variations
docid025306 rev 1 7/13 STGD6NC60H-1 electrical characteristics 13 figure 8. normalized gate threshold voltage vs temperature figure 9. collector-emitter on voltage vs collector current figure 10. normalized breakdown voltage vs temperature figure 11. switching losses vs temperature figure 12. switching losses vs gate resistance figure 13. switching losses vs collector current
electrical characteristics STGD6NC60H-1 8/13 docid025306 rev 1 figure 14. thermal impedance figure 15. turn-off soa
docid025306 rev 1 9/13 STGD6NC60H-1 test circuit 13 3 test circuit figure 16. test circuit for inductive load switching figure 17. gate charge test circuit figure 18. switching waveform figure 19. diode recovery time waveform
package mechanical data STGD6NC60H-1 10/13 docid025306 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 20. ipak (to-251) drawing 0068771_k
docid025306 rev 1 11/13 STGD6NC60H-1 package mechanical data 13 table 8. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
revision history STGD6NC60H-1 12/13 docid025306 rev 1 5 revision history table 9. revision history date revision changes 08-apr-2014 1 first release.
docid025306 rev 1 13/13 STGD6NC60H-1 13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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